Particle Growth Kinetics in Silane RF Discharges
Particle Growth Kinetics in Silane RF Discharges
复制标题
硅烷射频放电中的颗粒生长动力学
DOI：
10.1143/jjap.38.4542
复制
发表时间：
1999
影响因子：
1.5
通讯作者：
Yukio Watanabe
中科院分区：
文献类型：
--
作者：
M. Shiratani;T. Fukuzawa;Yukio Watanabe
硅烷射频放电中10 nm以上颗粒的生长动力学已被广泛研究，并得到相当好的澄清。此外，最近发展的新的测量方法的颗粒尺寸小于10纳米，导致了快速推进了解小颗粒的生长过程。这些以前的研究进行了审查，其初始生长阶段对应的粒度范围低于10 nm的口音。脉冲调制射频放电抑制颗粒生长的显着效果也被描述。颗粒的生长和调制对颗粒的抑制都可以通过考虑关键自由基（具有高生产率的SiH2的高反应性中性自由基）的产生、由关键自由基引发的颗粒生长反应和颗粒扩散的模型来解释。自由基产生区域。
Growth kinetics of particles above 10 nm in size in silane RF discharges has been extensively studied and fairly well clarified. Moreover, recent developments of new measurement methods for particles below 10 nm in size have led to a rapid advance in understanding the growth processes of small particles. Such previous studies are reviewed with the accent on their initial growth phase corresponding to a particle size range below 10 nm. The notable effect of pulse modulation of the RF discharges of suppressing particle growth is also described. Both the growth of particles and their suppression by the modulation can be explained by a model taking into account the production of key radicals (highly reactive neutral radicals of SiH2 having a high production rate), particle growth reactions initiated by the key radicals and particle diffusion in the radical production region.