Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy
Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy
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DOI：
10.1143/apex.3.061501
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发表时间：
2010-05
影响因子：
2.3
通讯作者：
L. Zhu;K. Kita;T. Nishimura;K. Nagashio;Shengkai Wang;A. Toriumi
中科院分区：
文献类型：
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作者：
L. Zhu;K. Kita;T. Nishimura;K. Nagashio;Shengkai Wang;A. Toriumi
用X射线光电子能谱(XPS)研究了SiO_2在高k/SiO_2界面的能带弯曲。根据高k/SiO_2界面的偶极形成而不是电荷效应或高k堆栈中硅酸盐的形成来讨论这种带弯曲。观察到在HfO_2/SiO_2界面和Y_2O_3/SiO_2界面形成的偶极导致这两个界面之间的相对SiO_2能带弯曲，∼为0.2 eV。HfO_2/SiO_2界面和Y_2O_3/SiO_2界面存在相反的偶极方向。本研究表明用XPS研究高k/SiO_2界面偶极形成机制的物理意义是有效的。
Band bending of SiO2 at high-k/SiO2 interface has been investigated by X-ray photoelectron spectroscopy (XPS). This band bending is discussed in terms of the dipole formation at high-k/SiO2 interface instead of charge effects or silicate formation in high-k stacks. The dipole formed at HfO2/SiO2 interface and Y2O3/SiO2 interface is observed to result in the relative SiO2 band bending of ∼0.2 eV between these two interfaces. The opposite dipole directions between at HfO2/SiO2 interface and at Y2O3/SiO2 interface have been demonstrated. Present study indicates the validity of applying XPS in investigating the physical insights of dipole formation mechanisms at high-k/SiO2 interface.