Epitaxial growth of PbZr_0.5Ti_0.5O_3 thin films on (001) LaAlO_3 by the chemical solution deposition method
Epitaxial growth of PbZr_0.5Ti_0.5O_3 thin films on (001) LaAlO_3 by the chemical solution deposition method
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化学溶液沉积法在(001)LaAlO_3上外延生长PbZr_0.5Ti_0.5O_3薄膜
DOI：
10.1557/jmr.1999.0541
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发表时间：
1999
影响因子：
2.7
通讯作者：
F. Lange
中科院分区：
文献类型：
--
作者：
J. Kim;F. Lange
采用化学溶液沉积法在（001）LaAlO 3（晶格失配度≤ 6.1%）衬底上生长了PbZr0.5Ti0.5O3（PZT）薄膜。在375和700 °C/1h之间的加热期间的外延序列通过X射线衍射和透射电子显微镜表征。在约375 °C/lh下，由热解的非晶前体形成PZT的纳米晶亚稳萤石相。在较高的温度下（400-425 °C/1小时），首先在界面处观察到稳定的PZT微晶;随着温度的升高，这些晶核穿过界面生长，并通过消耗亚稳定的纳米晶萤石晶粒而穿过膜朝向表面生长。在高于10500 °C/1h的退火温度下，PZT薄膜的外延取向关系为[100]（001）_PZT → [100]（001）_LAO。亚稳纳米晶萤石到稳定单晶钙钛矿的转变除了来自消除用于外延的晶界区域的驱动力之外，还通过提供自由能的额外降低而提供额外的驱动力。
Epitaxial PbZr_0.5Ti_0.5O_3 (PZT) thin films were grown on (001) LaAlO_3 substrates (∼6.1% lattice mismatch) by the chemical solution deposition method. The sequence of epitaxy during heating between 375 and 700 °C/1h was characterized by x-ray diffraction and transmission electron microscopy. At approximately 375 °C/1h, a nanocrystalline metastable fluorite phase of PZT was formed from the pyrolyzed amorphous precursor. At higher temperatures (400–425 °C/1h), thermodynamically stable PZT crystallites were first observed at the interface; with increasing higher temperatures, these nuclei grew across the interface and through the film toward the surface by consuming the metastable nanocrystalline fluorite grains. PZT thin films annealed above ∼500 °C/1h were observed to be dense with an epitaxial orientation relationship of [100](001)_PZT‖[100](001)_LAO. The metastable nanocrystalline fluorite to the stable single-crystal perovskite transformation gives an extra driving force by providing an additional decrease in free energy in addition to a driving force from the elimination of grain boundary area for epitaxy.