Crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films

Crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films
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Mn取代II-VI基磁性半导体薄膜的晶体学和光学性质

DOI:
10.1088/1742-6596/200/6/062009
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发表时间:
2010
期刊:
Journal of Physics : Conference Series
影响因子:
--
通讯作者:
T. Yamaguchi
T. Yamaguchi
中科院分区:
--
文献类型:
--
作者:
M. Imamura;T. Yamaguchi

文献摘要

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本文基于目前报道的三元和四元ZnMnTe、CdMnCoTe、ZnMnTe和ZnMnSe磁性半导体薄膜的室温磁光性质,研究了在蓝宝石(SA)或石英玻璃(QG)衬底上用分子束外延方法合成的Mn取代的II-VI基磁性半导体薄膜的晶体学和光学性质。蓝宝石或玻璃上的CdTe基薄膜表现出优先(111)生长,如前所述。然而,蓝宝石上的ZnTe基薄膜显示出(220)生长,据信是由C切六方SA衬底的(20 bar 2 2)平面引起的。从消光比的角度讨论了结晶度对SA和QG的光学或磁光性质的影响。QG薄膜的消光比低于SA薄膜,并在外加电场下进一步降低。结果表明,消光比的降低对薄膜的磁光效应有一定的贡献。
Building upon the room-temperature magneto-optical properties of ternary and quaternary zinc blende magnetic semiconductor films of CdMnTe, CdMnCoTe, ZnMnTe, and ZnMnSe reported to date, the present study examines the crystallographic and optical properties of Mn-substituted II-VI based magnetic semiconductor films synthesized on sapphire (SA) or quartz glass (QG) substrates by molecular beam epitaxy. CdTe-based films on sapphire or glass exhibited preferential (111) growth as reported previously. However, ZnTe-based films on sapphire showed a (220) growth believed to be induced by the (20 bar 2 2) plane of C-cut hexagonal SA substrates. The influence of crystallinity on optical or magneto-optical properties on both SA and QG is discussed from the viewpoint of the extinction ratio. The extinction ratio of films on QG was low compared to that of films on SA, and decreased further under an applied field. It has been shown that the decrease in the extinction ratio upon the application of a magnetic field contributes to the magneto-optical effect in the films.