Nanoimprint-assisted shear exfoliation plus transfer printing for producing transition metal dichalcogenide heterostructures
Nanoimprint-assisted shear exfoliation plus transfer printing for producing transition metal dichalcogenide heterostructures
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纳米压印辅助剪切剥离加转移印刷用于生产过渡金属二硫属化物异质结构
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Xiaogan Liang
中科院分区：
文献类型：
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作者：
Da Li;Sungjin Wi;Mikai Chen;B. Ryu;Xiaogan Liang
作者提出了一种纳米制造技术，能够制造出广泛的纳米电子学和光电子器件应用所需的过渡金属二卤化物异质结构阵列。这种纳米制造方法独特地结合了纳米印记辅助剪切剥离(NASE)和转印(TP)。用这种NASE + TP方法，作者已经生产出了特征厚度高度均匀的WSe_2/MoS_2异质结阵列(相对标准偏差为12%)。作者还制作了基于这种WSe2/MoS2异质结的光电二极管器件，与纯WSe2器件相比，它表现出显著增强的电流整流程度和光伏响应。这些结果表明，在原始的WSe2/MoS2界面上形成了相当大的内建势。这项工作推进了基于新兴的层状半导体制造高质量功能异质结构的自上而下的方法。
The authors present a nanofabrication technology capable of producing arrays of transition metal dichalcogenide heterostructures that are needed for a broad range of nanoelectronic and optoelectronic device applications. This nanofabrication approach uniquely combines nanoimprint-assisted shear exfoliation (NASE) and transfer printing (TP). Using this NASE + TP method, the authors have demonstrated production of WSe2/MoS2 heterostructure arrays with a high uniformity in feature thicknesses (relative standard deviation <12%). The authors have also created photodiode devices based on such WSe2/MoS2 heterostructures, which exhibit significantly enhanced degrees of current rectification as well as photovoltaic responses in comparison with pure WSe2 devices. Such results indicate that a sizable built-in potential is formed at the pristine WSe2/MoS2 interface. This work advances the top-down approaches for manufacturing high-quality functional heterostructures based on emerging layered semiconductors.