Transistorlike behavior in photoconductor based on dye-sensitized solar cell
Transistorlike behavior in photoconductor based on dye-sensitized solar cell
复制标题
基于染料敏化太阳能电池的光电导体中的晶体管行为
DOI：
10.1063/1.3171926
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发表时间：
2009-07-06
影响因子：
4
通讯作者：
Dai, S. Y.
中科院分区：
文献类型：
--
作者：
Wang, X. Q.;Cai, C. B.;Dai, S. Y.
基于使用纳米晶TiO2 薄膜的染料敏化太阳能电池建立了光电门控晶体管。电压-电流曲线具有三种类型的传输行为：线性增加、饱和平台和击穿增加，这实际上是光电晶体管的典型性能。此外，在电压-电流环路中观察到不对称行为，这被认为是由于有效光电导面积而不是横截面积的差异造成的。在环路测量期间也会检查公共反电极和漏极之间的光伏电压 (VCE-D)，阐明源极中的主要暗过程和漏极中的主要光伏过程是串联的，从而改变了电势水平，从而产生了光电晶体管的特征行为。
A photogated transistor is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized with three types of transport behaviors: linear increase, saturated plateau, and breakdownlike increase, which are actually of the typical performances for a phototransistor. Moreover, an asymmetric behavior is observed in the voltage-current loops, which is believed to be due to the difference in the effective photoconducting areas rather than the cross-section areas. The photovoltaic voltage between the common counter electrode and drain (VCE-D) is examined as well during the loop measurements, clarifying that the predominant dark process in source and the predominant photovoltaic process in drain are series connected, modifying the electric potential levels, and thus resulting in the characteristic phototransistor behaviors.