Phonon-induced dephasing of localized optical excitations.
Phonon-induced dephasing of localized optical excitations.
复制标题
DOI:
10.1103/physrevb.54.2561
复制
发表时间:
1996-07
期刊:
影响因子:
--
通讯作者:
D. Brinkmann;Fausto Rossi;Stephan W Koch;Peter Thomas
中科院分区:
文献类型:
--
作者:
D. Brinkmann;Fausto Rossi;Stephan W Koch;Peter Thomas
The dynamics of strongly localized optical excitations in semiconductors is studied including electron-phonon interaction. The coupled microscopic equations of motion for the interband polarization and the carrier distribution functions contain coherent and incoherent contributions. While the coherent part is solved through direct numerical integration, the incoherent one is treated by means of a generalized Monte Carlo simulation. The approach is illustrated for a simple model system. The temperature and excitation energy dependence of the optical dephasing rate is analyzed and the results are compared to those of alternative approaches