Vortex pinning property of phosphorous-doped BaFe2As2 epitaxial films: Comparison between (La,Sr)(Al,Ta)O3 and MgO substrates
Vortex pinning property of phosphorous-doped BaFe2As2 epitaxial films: Comparison between (La,Sr)(Al,Ta)O3 and MgO substrates
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磷掺杂 BaFe2As2 外延膜的涡旋钉扎特性：(La,Sr)(Al,Ta)O3 和 MgO 衬底的比较
DOI：
10.1109/tasc.2014.2368073
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and H. Hosono
中科院分区：
文献类型：
--
作者：
H. Sato;H. Hiramatsu;T. Kamiya;and H. Hosono
在（La，Sr）（Al，Ta）O3单晶衬底上制备了磷掺杂BaFe2As2（BaFe2As2：P）外延薄膜，并对其结晶度、微结构和输运临界电流密度（Jc）特性进行了表征。与以前报道的MgO衬底上的BaFe_2As_2：P外延薄膜相比，在强磁场下，自场J_c减小，沿c轴沿着具有较强的钉扎特性.这些结果可以通过考虑本发明的薄膜在（La，Sr）（Al，Ta）O3上的差的结晶性和大密度的畴界钉扎中心来理解，这将是由于BaFe 2As 2：P薄膜和（La，Sr）（Al，Ta）O3衬底之间产生的薄的反应层引起的。
Phosphorus-doped BaFe2As2(BaFe2As2: P) epitaxial films were fabricated on (La, Sr)(Al, Ta)O3single-crystal substrates, and their crystallinity, microstructure, and transport critical current density (Jc) properties were characterized. Compared with those of previously reported BaFe2As2: P epitaxial films on MgO substrates, a decrease in the self-field Jcand strong pinning properties along the c-axis under high magnetic fields were observed. These results can be understood by considering the poor crystallinity and the large density of the domain boundary pinning centers of the present films on (La, Sr)(Al, Ta)O3, which would be caused by a thin reaction layer produced between the BaFe2As2: P film and the (La, Sr)(Al, Ta)O3substrate.