Reactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties
Reactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties
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DOI：
10.1016/j.actamat.2013.07.016
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发表时间：
2013-10-01
期刊：
影响因子：
9.4
通讯作者：
Bai, H. L.
中科院分区：
文献类型：
--
作者：
Mi, W. B.;Guo, Z. B.;Bai, H. L.
用反应溅射法制备了具有（100）和（110）取向的γ '-Fe 4 N外延薄膜，并用X射线θ-2 θ和φ扫描、极图和高分辨透射电子显微镜对薄膜进行了表征。由于膜厚小于58 nm，因此膜表面非常光滑。薄膜具有软铁磁性，饱和磁化强度随温度的升高而降低，遵循Bloch自旋波理论。薄膜还表现出金属导电机制。低于30 K，磁阻（MR）是积极的，并在高场范围内与所施加的磁场线性增加。在低场范围内，MR突然增加。在30 K以上，磁电阻为负值，其值随外加磁场线性增加. (C)2013 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
Epitaxial gamma'-Fe4N films with (1 0 0) and (1 1 0) orientations have been fabricated by reactive sputtering; these films were characterized by X-ray theta-2 theta and phi scans, pole figures and high-resolution transmission electron microscopy. The film surface is very smooth as the film is less than 58 nm thick. The films exhibit soft ferromagnetism, and the saturation magnetization decreases with an increase in temperature, following Bloch's spin wave theory. The films also exhibit a metallic conductance mechanism. Below 30 K, magnetoresistance (MR) is positive and increases linearly with the applied field in the high-field range. In the low-field range, MR increases abruptly. Above 30 K, MR is negative, and its value increases linearly with the applied field. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.