Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
Magnetron sputtered epitaxial single-phase Ti3SiC2 thin films
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DOI：
10.1063/1.1494865
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发表时间：
2002-07
影响因子：
4
通讯作者：
J. Palmquist;U. Jansson;T. Seppänen;P. Persson;J. Birch;L. Hultman;P. Isberg
中科院分区：
文献类型：
--
作者：
J. Palmquist;U. Jansson;T. Seppänen;P. Persson;J. Birch;L. Hultman;P. Isberg
我们报告的合成和表征的外延单晶Ti 3SiC 2薄膜（Mn+1AXn相）。介绍了两种新颖的沉积技术，（i）从Ti 3SiC 2复合靶磁控溅射和（ii）从单独的钛和硅靶以共蒸发的C60作为碳源溅射。用这两种技术在900 °C下生长单晶质量的外延Ti 3SiC 2膜。以C_（60）为碳源，采用Ti溅射法在MgO（111）表面原位沉积TiC（111）外延层，制备了Ti_3SiC_2薄膜。外延关系为Ti 3SiC 2（0001）//TiC（111）//MgO（111），面内取向为Ti 3SiC 2 [100]//TiC[101]//MgO[101]。
We report on the synthesis and characterization of epitaxial single-crystalline Ti3SiC2 films (Mn+1AXn-phase). Two original deposition techniques are described, (i) magnetron sputtering from Ti3SiC2 compound target and (ii) sputtering from individual titanium and silicon targets with co-evaporated C60 as carbon source. Epitaxial Ti3SiC2 films of single-crystal quality were grown at 900 °C with both techniques. Epitaxial TiC(111) deposited in situ on MgO(111) by Ti sputtering using C60 as carbon source was used to nucleate the Ti3SiC2 films. The epitaxial relationship was found to be Ti3SiC2(0001)//TiC(111)//MgO(111) with the in-plane orientation Ti3SiC2[100]//TiC[101]//MgO[101].