pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories
pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories
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pJ 级能耗低压铁电有机场效应晶体管存储器
DOI：
10.1021/acs.jpclett.9b00864
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发表时间：
2019-05-16
影响因子：
5.7
通讯作者：
Li, Yun
中科院分区：
文献类型：
--
作者：
Pei, Mengjiao;Qian, Jun;Li, Yun
铁电有机场效应晶体管（Fe-OFFET）由于其在存储器应用中的巨大潜力而引起了人们的广泛关注，但其关键问题是由高工作电压和慢数据切换引起的大能量消耗。在这里，我们采用半导体铁电聚合物和半导体分子晶体来创建低电压的Fe-OFET存储器。设备仅需要pJ级的能耗。写入和擦除过程分别需要类似于1.2和1.6 pJ/位，并且阅读能量类似于1.9 pJ/位（开状态）和类似于0.2 fJ/位（关状态）。因此，我们的记忆只消耗
Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted considerable attention because of their promising potential for memory applications, while a critical issue is the large energy consumption mainly caused by a high operating voltage and slow data switching. Here, we employ ultrathin ferroelectric polymer and semiconducting molecular crystals to create low-voltage Fe-OFET memories. Devices require only pJ-level energy consumption. The writing and erasing processes require similar to 1.2 and 1.6 pJ/bit, respectively, and the reading energy is similar to 1.9 pJ/bit (on state) and similar to 0.2 fJ/bit (off state). Thus, our memories consume only