Design and application of a 1200V ultra-fast integrated Silicon Carbide MOSFET module
Design and application of a 1200V ultra-fast integrated Silicon Carbide MOSFET module
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DOI：
10.1109/apec.2016.7468151
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发表时间：
2016-03
期刊：
影响因子：
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通讯作者：
Suxuan Guo;Liqi Zhang;Yang Lei;Xuan Li;Wensong Yu;A. Huang
中科院分区：
文献类型：
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作者：
Suxuan Guo;Liqi Zhang;Yang Lei;Xuan Li;Wensong Yu;A. Huang
随着近几年碳化硅、氮化镓等宽禁带功率器件的商业化应用，大功率、高频电力电子学的应用越来越受到人们的重视。碳化硅MOSFET的快速开关速度和高温特性突破了传统硅MOSFET的限制。然而，高di/dt和dv/dt下的电磁干扰问题是一个不容忽视的问题。漏极源极电压和选通信号的过冲和振荡会导致开关击穿。本文提出了一种1200V集成的SiCMOSFET模块。超快栅极驱动器与SiCMOSFET集成后，寄生电感和寄生电容显著减小，从而抑制了寄生参数引起的电磁干扰问题。因此，可以在模块中采用零栅极电阻来进一步提高开关速度。结果表明，集成SIC模块的开关性能优于分立封装器件。采用逆变器电平测量和合成法测量了SiCMOSFET模块的开关损耗。当漏电流低于某一临界值时，可实现零开关损耗。该模块已经在1.5 MHz和3.38 MHz的开关频率下进行了测试，证明了其高速性能。对于孤立拓扑应用，本文讨论了高频对功率密度和效率的影响。
With the commercial introduction of wide bandgap power devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in the last few years, the high power and high frequency power electronics applications have gained more attention. The fast switching speed and high temperature features of SiC MOSFET break the limit of the traditional silicon MOSFET. However, the EMI problem under high dI/dt and dV/dt is an unneglectable problem. The overshoot and oscillation on drain-source voltage and gating signal could cause breakdown of the switches. This paper proposes a 1200V integrated SiC MOSFET module. With the ultra-fast gate driver integrated with the SiC MOSFET, the parasitic inductance and capacitance could be reduced dramatically, which accordingly suppress the EMI problem caused by the parasitic parameters. Thus zero gate resistance could be adopted in the module to further increase the switching speed. The switching performance of the integrated SiC module is shown better than the discrete package device. The switching loss of the SiC MOSFET module is measured by the inverter level measurement and composition method. Zero switching loss could be achieved when the drain current is lower than a critical value. The module has been tested at 1.5MHz and 3.38MHz switching frequency to prove its high speed capability. For isolated topology applications, the impact of high frequency on the power density and efficiency is discussed in this paper.