(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas
(Invited) Tunnel-Barrier Rectifiers for Optical Nantennas
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（特邀）光学天线用隧道势垒整流器
DOI：
10.1149/07202.0287ecst
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Mitrovic I
中科院分区：
文献类型：
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作者：
Mitrovic I
我们提出了全面的实验和理论工作隧道势垒整流器，包括双（Nb 2 O 5-Al 2 O3）和三（Ta 2 O 5-Nb 2 O 5-Al 2 O3）绝缘体配置工程，以提高低电压非线性。整流器的关键属性，不对称性，非线性和响应度进行了评估，从电流-电压测量。已观察到MIIIM整流器具有出色的上级低压不对称性（0.1 V时为12）和响应度（0.2 V时为5 A/W）。结果表明，在级联和非级联MIIIM安排，包括在光学纳米天线的原子多层隧道势垒增强整流。
We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising double (Nb2O5-Al2O3) and triple (Ta2O5-Nb2O5-Al2O3) insulator configurations engineered to enhance low-voltage nonlinearity. The key rectifier properties, asymmetry, nonlinearity and responsivity have been assessed from current-voltage measurements. A superior low-voltage asymmetry (12 at 0.1 V) and responsivity (5 A/W at 0.2 V) for MIIIM rectifiers have been observed. The results demonstrate enhanced rectification by atomically multi-layering tunnel barriers in cascaded and non-cascaded MIIIM arrangements, for inclusion in optical nantennas.