Static and dynamic characterization of large-area high-current-density SiC Schottky diodes
Static and dynamic characterization of large-area high-current-density SiC Schottky diodes
复制标题
大面积高电流密度 SiC 肖特基二极管的静态和动态特性
DOI：
10.1109/16.902738
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
M. Melloch
中科院分区：
文献类型：
--
作者：
G. Dolny;D. Morisette;P. Shenoy;M. Zafrani;J. Gladish;J. Woodall;J. Cooper;M. Melloch
SiC器件在功率开关应用中提供了潜在的优势，因为它们的宽带隙和更高的击穿场相比，硅。人们普遍认为，SiC功率器件的第一个商业应用将是肖特基二极管，用作驱动电感负载（电机）的硅IGBT的反激整流器。在这些电路中，用SiC肖特基二极管代替硅PiN二极管，可以将电路的总开关损耗降低高达35%。
SiC devices offer potential advantages in power switching applications due to their wide band gap and higher breakdown field compared to silicon. It is widely felt that the first commercial application of SiC power devices will be Schottky diodes used as flyback rectifiers for silicon IGBTs driving inductive loads (motors). The simple substitution of SiC Schottky diodes in place of silicon PiN diodes in these circuits can reduce the overall switching loss of the circuit by up to 35%.