Thermal Impact of Rear Insulation, Light Trapping, and Parasitic Absorption in Solar Modules

Thermal Impact of Rear Insulation, Light Trapping, and Parasitic Absorption in Solar Modules
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太阳能模块中后部绝缘、光捕获和寄生吸收的热影响

DOI:
10.1109/jphotov.2022.3173785
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发表时间:
2022
影响因子:
3
通讯作者:
Kurtz, Sarah R.
Kurtz, Sarah R.
中科院分区:
工程技术3区
文献类型:
--
作者:
Irvin, Nicholas P.;Escobar, D. Martinez;Wheeler, Aaron;King, Richard R.;Honsberg, Christiana B.;Kurtz, Sarah R.

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亚带隙光的反射被认为是实现低温太阳能模块的最有效途径。本报告比较了GaAs模块与高的子带隙反射的各种硅模块下的两个实验热配置。在一个太阳下,GaAs模块的运行温度比开放式机架配置中的多晶硅和单晶硅都低0.66 °C。对于绝热配置,这种热优势增加到1013 °C。实验数据被用来建立理论模型,发现在1.4°C-2.8 °C之间的均方根误差是一致的。该模型显示,这些GaAs模块的主要热优势是其79%的高次带隙反射。接下来,它示出,与平面GaAs模块所实现的值相比,在具有纹理化Si单元的模块中的子带隙反射从根本上是有限的,这是由于光捕获所发生的寄生吸收的放大。在Si模块中,光捕获使封装层的寄生吸收增加一倍以上,将最大子带隙反射限制为63%。更高的值需要对前层、体层和后层进行彻底优化,但对于绝缘硅模块,可以将工作温度降低高达12 °C。
Reflection of sub-bandgap light has been argued to be the most effective path to lower temperature solar modules. This report compares GaAs modules with high sub-bandgap reflection to various Si modules under two experimental thermal configurations. At one sun, the GaAs modules operate ∼6 °C colder than both multicrystalline and monocrystalline Si within an open-rack configuration. This thermal advantage increases to ∼13 °C for the thermally insulated configuration. The experimental data are used to build a theoretical model, finding agreement with root-mean-square error between 1.4°C–2.8 °C. The model shows the main thermal advantage of these GaAs modules to be their high sub-bandgap reflection of 79%. Next, it is shown that the sub-bandgap reflection in modules with textured Si cells is fundamentally limited compared to values achieved by the planar GaAs modules, because of the amplification of parasitic absorption that occurs with light trapping. In Si modules, light trapping more than doubles the parasitic absorption of encapsulation layers, limiting the maximum sub-bandgap reflection to 63%. Higher values require thorough optimization of front, bulk, and rear layers, but could lower operating temperatures by up to 12 °C for insulated Si modules.