Silicon-Catalyzed Growth of Amorphous SiOx Nanowires by Laser Vaporization of Si and Si/SiO2
Silicon-Catalyzed Growth of Amorphous SiOx Nanowires by Laser Vaporization of Si and Si/SiO2
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DOI：
10.1021/jp409039x
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发表时间：
2013-11
影响因子：
3.7
通讯作者：
Keita Kobayashi;F. Kokai;N. Sakurai;H. Yasuda
中科院分区：
文献类型：
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作者：
Keita Kobayashi;F. Kokai;N. Sakurai;H. Yasuda
通过透射电子显微镜 (TEM)、高分辨率 TEM、能量过滤 TEM、透射电子衍射、能量色散 X 射线光谱、电子能量损失光谱和粉末 X 射线对四种类型的靶（Si、(1:1) Si/SiO2、(1:9) Si/SiO2 和 SiO2）在不添加任何金属催化剂的情况下在高压 (0.9 MPa) Ar 气体存在下激光汽化的产物进行了表征衍射测量。对于来自 Si 和 Si/SiO2 复合靶材的产品，观察到非晶态 SiOx (0.8 ≤ x ≤ 2.0) 纳米线 (NW)（直径 10–40 nm，最长 1 μm），其纳米线尖端覆盖有薄非晶态 SiOx 层的结晶硅纳米颗粒 (NP)，而 SiO2 靶材仅产生非晶态 SiOx NP。随着靶材中SiO2含量的增加，SiOx NWs中O相对于Si的含量也增加。我们提出了一种非晶 SiOx 纳米线生长的新机制，其中纳米线的核形成在富含硅的...
Products from the laser vaporization of targets of four types—Si, (1:1) Si/SiO2, (1:9) Si/SiO2, and SiO2—without the addition of any metal catalysts in the presence of high-pressure (0.9 MPa) Ar gas were characterized by transmission electron microscopy (TEM), high-resolution TEM, energy-filtered TEM, transmission electron diffractometry, energy-dispersive X-ray spectroscopy, electron energy loss spectroscopy, and powder X-ray diffractometry. Amorphous SiOx (0.8 ≤ x ≤ 2.0) nanowires (NWs) (10–40 nm in diameter and up to 1 μm long), having crystalline Si nanoparticles (NPs) covered with thin amorphous SiOx layers at the NW tips, were observed for the products from the Si and Si/SiO2 composite targets, while only amorphous SiOx NPs were produced from the SiO2 target. The O content relative to that of the Si in SiOx NWs was also increased with increasing the content of SiO2 in the targets. We propose a novel mechanism for the growth of amorphous SiOx NWs, in which nuclei of the NWs are formed on the Si-rich ...