Pressure dependence of superconducting-transition temperature of YbGa1.1Si0.9
Pressure dependence of superconducting-transition temperature of YbGa1.1Si0.9
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YbGa1.1Si0.9 超导转变温度的压力依赖性
DOI：
10.1088/1742-6596/215/1/012035
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
N. Tsujii
中科院分区：
文献类型：
--
作者：
A. Ohmura;Koji Fujimaki;M. Einaga;F. Ishikawa;A. Nakayama;Y. Yamada;M. Imai;N. Tsujii
本文研究了YbGa_（1.1）Si_（0.9）的超导转变温度Tc与压力的关系。YbGa_（1.1）Si_（0.9）是一种AlB_2型层状超导体，Tc = 2.4K。电阻率的测量进行了静水压力高达2.5 GPa下使用活塞缸型压力电池。在2.5GPa下，随着压力的增加，YbGa_（1.1）Si_（0.9）的Tc从2.4K下降到1.1K，Tc的压力导数dTc/dP为-0.78K/GPa。这种负压力的Tc的导数类似于其他超导AlB 2型硅化物。对于YbGa 1.1Si 0.9，Tc的相对压力导数dlnTc/dP为-0.33 GPa−1，比其他层状超导体的大10倍。
Pressure dependence of the superconducting transition temperature Tc has been investigated in YbGa1.1Si0.9, which is the AlB2-type layered superconductor with Tc = 2.4 K. The electrical resistivity measurements were carried out under hydrostatic pressure up to 2.5 GPa using a piston-cylinder type pressure cell. With increasing pressure, the Tc of YbGa1.1Si0.9 decreases from 2.4 K to 1.1 K at 2.5 GPa with a pressure derivative of Tc, dTc/dP, of – 0.78 K/GPa. This negative pressure derivative of Tc is similar to the other superconducting AlB2-type silicides. The relative pressure derivative of Tc, dlnTc/dP, for YbGa1.1Si0.9 is – 0.33 GPa−1, which is about ten times larger than those for other layered superconductors.
影响因子：
3.7
作者：
S. Kuroiwa;H. Sagayama;T. Kakiuchi;H. Sawa;Y. Noda;J. Akimitsu
通讯作者：
S. Kuroiwa;H. Sagayama;T. Kakiuchi;H. Sawa;Y. Noda;J. Akimitsu