Upset hardened memory design for submicron CMOS technology
Upset hardened memory design for submicron CMOS technology
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DOI：
10.1109/23.556880
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发表时间：
1996-12-01
影响因子：
1.8
通讯作者：
Velazco, R
中科院分区：
文献类型：
--
作者：
Calin, T;Nicolaidis, M;Velazco, R
提出了一种新的对辐射引起的单粒子翻转不敏感的存储元件的设计技术。该技术适用于采用亚微米CMOS工艺的高密度ASIC和静态RAM。
A novel design technique is proposed for storage elements which are insensitive to radiation-induced single-event upsets. This technique is suitable for implementation in high density ASICs and static RAMs using submicron CMOS technology.