An optical study of the D—D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers
An optical study of the D—D neutron irradiation-induced defects in Co- and Cu-doped ZnO wafers
复制标题
DOI：
10.1088/1674-1056/22/3/036102
复制
发表时间：
2013-03
影响因子：
1.7
通讯作者：
Yun-Bo Wang;Gongping Li;N. Xu;X. Pan
中科院分区：
文献类型：
--
作者：
Yun-Bo Wang;Gongping Li;N. Xu;X. Pan
研究了 D-D 中子（注量为 2.9 × 1010 cm−2）辐照的 Co 掺杂（1 × 1014、5 × 1016 和 1 × 1017 cm−2）和 Cu 掺杂（5 × 1016 cm−2）ZnO 晶片的室温光致发光和光学透射光谱。辐照后，掺杂 ZnO 晶片中的 Co 或 Cu 金属和氧化物簇溶解，每个样品的 ZnO 衬底的纤锌矿结构保持不变，并保持高 c 轴择优取向。从吸收带尾参数（E0）反映的辐照引起的晶体无序程度，掺杂的 ZnO 远大于未掺杂的。在相同掺杂浓度下，Cu掺杂ZnO晶片比Co掺杂ZnO晶片具有更高的辐照诱导无序性。光致发光测量表明，高掺杂水平的掺杂ZnO晶片的锌空位和锌填隙的引入率比未掺杂的ZnO晶片高得多。此外，表明在掺杂的 ZnO 晶片中会形成晶格畸变和缺陷复合体。因此，与未掺杂的ZnO晶片相比，Co或Cu掺杂的ZnO晶片（尤其是高掺杂水平）表现出非常低的辐射硬度，并且Cu掺杂的ZnO晶片的辐射硬度远低于Co掺杂的ZnO晶片。
Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped (1 × 1014, 5 × 1016, and 1 × 1017 cm−2) and Cu-doped (5 × 1016 cm−2) ZnO wafers irradiated by D—D neutrons (fluence of 2.9 × 1010 cm−2) have been investigated. After irradiation, the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved, and the wurtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation. The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter (E0) is far greater for doped ZnO than the undoped one. Under the same doping concentration, the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one. Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one. In addition, both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers. Consequently, the Co- or Cu-doped ZnO wafer (especially with a high doping level) exhibits very low radiation hardness compared with the undoped one, and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.