Model for ion-induced nucleation based on properties of small ionic clusters
Model for ion-induced nucleation based on properties of small ionic clusters
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基于小离子簇特性的离子诱导成核模型
DOI：
10.1116/1.580139
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
M. Kelkar
中科院分区：
文献类型：
--
作者：
S. Girshick;N. Rao;M. Kelkar
提出了一种计算离子诱导成核速率的方法。而经典的离子诱导成核理论使得小离子团簇近似为带电液滴，其性质等于其对于本体液体的值，所提出的方法以离散团簇性质的总和的形式给出成核速率。求和在临界团簇尺寸附近迅速收敛，该尺寸通常小到几个原子。这种方法允许直接利用实验和/或计算数据的集群属性。样品计算硅粒子的成核，通过冷凝的中性硅蒸气到硅阴离子的微电子加工等离子体的条件下的代表。随着温度的升高，预测的成核速率显示出从碰撞限制状态到冷凝-蒸发状态的转变，其中成核速率随温度急剧下降。发生这种情况的温度值..
A method is presented for calculating ion‐induced nucleation rates. Whereas classical ion‐induced nucleation theory makes the approximation that small ionic clusters are charged droplets whose properties equal their values for the bulk liquid, the method presented gives a nucleation rate in the form of a summation over discrete cluster properties. The summation converges rapidly around the critical cluster size, which is often as small as a few atoms. This approach allows the direct utilization of experimental and/or computational data for cluster properties. Sample calculations are presented for nucleation of silicon particles via condensation of neutral silicon vapor onto silicon anions for conditions representative of microelectronics processing plasmas. As the temperature increases the predicted nucleation rates show a transition from the collision‐limited regime to the condensation–evaporation regime, where nucleation rates drop sharply with temperature. The value of the temperature where this occurs...