An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO_2/GeO_2 bilayer passivation
An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO_2/GeO_2 bilayer passivation
复制标题
SiO_2/GeO_2双层钝化Ge金属-绝缘体-半导体电容器界面态的深能级瞬态光谱准确表征
DOI：
10.1063/1.4759139
复制
发表时间：
2012
影响因子：
3.2
通讯作者：
H. Nakashima
中科院分区：
文献类型：
--
作者：
D. Wang;S. Kojima;K. Sakamoto;K. Yamamoto;H. Nakashima
