High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz
复制标题
DOI：
10.1049/el.2020.0281
复制
发表时间：
2020-06-25
影响因子：
1.1
通讯作者：
Fay, P.
中科院分区：
文献类型：
--
作者：
Moon, J. S.;Grabar, R.;Fay, P.
报道了高尺寸60 nm栅长梯度沟道AlGaN/GaN高电子迁移率晶体管(HEMTs)，在Vdd=10V时，其功率密度为2.1W/mm时，功率增加效率(PAE)为75%，在Vdd=14V时，在30 GHz时，功率密度为3.0W/mm时，PAE为65%。在双音功率测量下，梯度沟道AlGaN/GaN高电子迁移率晶体管的功率性能与峰值PAE>；这种新颖的通道设计为高达3W/mm射频功率密度的高效率毫米波(MmW)功率放大器展示了巨大的前景。
The authors report on highly scaled 60 nm gate length graded-channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two-tone power measurement, the graded-channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high-efficiency millimetre-wave (mmW) power amplifiers up to 3 W/mm RF power density operation.