Ultrasonic chemical bath deposition of ZnS(O,OH) buffer layers and its application to CIGS thin-film solar cells
Ultrasonic chemical bath deposition of ZnS(O,OH) buffer layers and its application to CIGS thin-film solar cells
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DOI：
10.1016/j.solmat.2006.06.032
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发表时间：
2006-11
影响因子：
6.9
通讯作者：
Akira Ichiboshi;M. Hongo;Takuya Akamine;Tsukasa Dobashi;T. Nakada
中科院分区：
文献类型：
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作者：
Akira Ichiboshi;M. Hongo;Takuya Akamine;Tsukasa Dobashi;T. Nakada
Cu（In 1 −X，GaX）Se 2（CIGS）基薄膜太阳能电池采用ZnS（O，OH）缓冲层的超声化学浴沉积（US-CBD）制备。通过US振动去除生长膜上的小颗粒。采用一次沉积US-CBD工艺制备了高效率的CIGS器件。结果发现，电池性能，特别是FF，通过US-CBD得到改善。
Cu(In1−X,GaX)Se2(CIGS)-based thin-film solar cells have been fabricated using ultrasonic chemical bath deposition (US-CBD) of ZnS(O,OH) buffer layers. Small particles on the growing film were removed by US vibration. High-efficiency CIGS devices were achieved by one-deposition US-CBD process. It was found that the cell performance, especially FF, was improved by US-CBD.