X-ray Damage to CF3CO2-Terminated Organic Monolayers on Si/Au: Principal Effect of Electrons
X-ray Damage to CF3CO2-Terminated Organic Monolayers on Si/Au: Principal Effect of Electrons
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Si/Au 上 CF3CO2 封端的有机单层的 X 射线损伤:电子的主效应
DOI:
10.1126/science.254.5034.981
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发表时间:
1991
期刊:
影响因子:
56.9
通讯作者:
G. Whitesides
中科院分区:
文献类型:
--
作者:
P. E. Laibinis;R. Graham;H. Biebuyck;G. Whitesides
The relative importance of x-rays alone and of x-ray-generated primary and secondary electrons in damaging organic materials was explored by use of self-assembled monolayers (SAMs) on multilayer thin-film supports. The substrates were prepared by the deposit of thin films of silicon (0, 50, 100, and 200 angstroms) on thick layers of gold (2000 angstroms). These systems were supported on chromium-primed silicon wafers. Trifluoroacetoxy-terminated SAMs were assembled on these substrates, and the samples were irradiated with common fluxes of monochromatic aluminum Kα x-rays. The fluxes and energy distributions of the electrons generated by interactions of the x-rays with the various substrates, however, differed. The substrates that emitted a lower flux of electrons exhibited a slower loss of fluorine from the SAMs. This observation indicated that the electrons—and not the x-rays themselves—were largely responsible for the damage to the organic monolayer.