Growth of III-nitride quantum dots and their applications to blue-green LEDs
Growth of III-nitride quantum dots and their applications to blue-green LEDs
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DOI：
10.1002/pssa.200880222
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发表时间：
2008-11-01
影响因子：
2
通讯作者：
Smith, David J.
中科院分区：
文献类型：
--
作者：
Moustakas, T. D.;Xu, Tao;Smith, David J.
在本文中，我们讨论了在 GaN 或 AlN 模板上通过 MBE 生长 InN、GaN 和 InGaN QD，发现 GaN 模板上的 InN QD 在没有 InN 润湿层的情况下发生，这一结果与 InN 和 GaN 之间 11% 的大晶格失配一致。使用改进的 Stranski-Krastanov 生长模式在 AlN 模板上生长自组装 GaN QD。通过电子显微镜和原子力显微镜研究了单层或超晶格结构中此类量子点的微观结构和尺寸分布。最后，讨论了使用 Stranski-Krastanov 模式在 GaN 模板上自组装 InGaN 量子点以及此类量子点在蓝绿光 LED 中的应用。结果表明，InGaN / GaN 多量子点 (MQD) 处于高应变状态，并且由于量子限制斯塔克效应，它们在低注入时的发射相对于单层 QD 的发射发生红移。 (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
In this paper we discuss the growth of InN, GaN and InGaN QDs by MBE on either GaN or AlN templates, InN QDs on GaN templates were found to occur without an InN wetting layer, a result consistent with the large lattice mismatch of 11% between InN and GaN. Self-assembled GaN QDs were grown on AlN templates, using the modified Stranski-Krastanov mode of growth. The microstructure and the size distribution of such QDs in a single layer or a superlattice structure were investigated by electron microscopy and atomic force microscopy. Finally, the self assembly of InGaN QDs on GaN templates using the Stranski-Krastanov mode and the applications of such QDs to blue-green LEDs are addressed. The results indicate that InGaN / GaN multiple quantum dots (MQDs) are highly strained and their emission at low injection is red shifted with respect to that of a single layer of QDs due to quantum confined Stark effect. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim