A D-band phase compensated variable gain amplifier
A D-band phase compensated variable gain amplifier
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D波段相位补偿可变增益放大器
DOI:
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发表时间:
2012
期刊:
影响因子:
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通讯作者:
I. Kallfass
中科院分区:
文献类型:
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作者:
D. Muller;S. Diebold;H. Massler;A. Tessmann;A. Leuther;T. Zwick;I. Kallfass
This paper presents a variable gain amplifier (VGA) for D-band (110 - 170 GHz) applications using metamorphic high electron mobility transistors (mHEMT) with gate lengths of 100 nm. The VGA is based on a cascode architecture with gate-widths of 2×30μm and is designed with phase compensation techniques. The overall chip-size is 0.75×0.75mm2. With 50Ω terminations and a 2V supply-voltage the maximum gain is approximately 10 dB with a control range of over 16 dB. Phase deviations versus gain are less than 4° at frequencies around 161 GHz with input- and output return loss both better than -7 dB.