Rapid and controllable a-Si:H-to-nc-Si:H transition induced by a high-density plasma route
Rapid and controllable a-Si:H-to-nc-Si:H transition induced by a high-density plasma route
复制标题
高密度等离子体路径诱导的快速且可控的 a-Si:H 到 nc-Si:H 转变
DOI：
10.1088/1361-6463/aa7e6a
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发表时间：
2017
影响因子：
3.4
通讯作者：
Feng Y. Y.
中科院分区：
文献类型：
--
作者：
Zhou H. P.;Xu M.;Xu S.;Xu L. X.;Ji H.;Xiao S. Q.;Feng Y. Y.
非晶硅低温快速固相晶化路线具有重要的基础和技术意义。将微米厚的氢化非晶硅（a-Si:H）薄膜在300℃的低衬底温度下暴露于低频感应耦合氢等离子体。等离子体处理的a-Si:H在半小时内完全结晶。微观结构、光学和电学特性相对于等离子体暴露持续时间的演变明确地表明，目前的低温快速结晶过程能够实现从非晶硅到纳米晶（nc）硅的可控相变。根据低频感应耦合等离子体 (LFICP) 的独特特性和 LFICP 生长的前驱体 a-Si:H 薄膜本身，讨论了结晶机制。还讨论了氢原子在相变中的关键作用。
The low-temperature rapid solid phase crystallization route of amorphous silicon is fundamentally and technologically significant. Micrometer thick hydrogenated amorphous silicon (a-Si: H) films were exposed to a low-frequency inductively coupled hydrogen plasma under a low substrate temperature of 300 C. The plasma treated a-Si: H was completely crystallized within half an hour. The evolution of microstructures, optical and electric properties with respect to plasma exposure duration deterministically demonstrates that the present low-temperature rapid crystallization process enables the controllable phase transition from amorphous to nanocrystalline (nc) silicon. The crystallization mechanism is discussed in terms of the unique characteristics of low-frequency inductively coupled plasma (LFICP) and the LFICP-grown precursor a-Si: H film itself. The crucial role of hydrogen atoms in the phase transition is also discussed.