Red lasers grown by all-solid-source molecular beam epitaxy
Red lasers grown by all-solid-source molecular beam epitaxy
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全固体源分子束外延生长的红色激光器
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
R. Nabiev
中科院分区：
文献类型：
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作者：
P. Savolainen;M. Toivonen;M. Pessa;P. Corvini;M. Jansen;R. Nabiev
我们利用全固体源分子束外延进行层生长，制备了高功率600 nm光谱带量子阱激光器。在连续波模式下，标称波长 670 nm 时的输出功率高达 3 W，650 nm 时的输出功率为 2 W，630 nm 时的输出功率为 1 W。阈值电流密度对于nm为350-，对于nm为500-并且小于对于nm。阈值电流的特征温度在K at nm范围内，约为60 K at nm。对于腔长为 1 mm 的未涂层器件，斜率效率在每面 0.50 至 0.58 W 之间。对于镜面涂层激光器，观察到的最大电光转换效率在 30% 到 48% 之间。已经对 650 和 670 nm 激光器进行了初步寿命测试，表明这些激光器的运行相当可靠。
We have prepared high-power 600 nm spectral band quantum well lasers using all-solid-source molecular beam epitaxy for layer growth. An output power up to 3 W in continuous wave mode has been demonstrated at the nominal wavelength of 670 nm, 2 W at 650 nm and 1 W at 630 nm. The threshold current densities are 350- for nm, 500- for nm and less than for nm. The characteristic temperature of threshold current falls within the range of K at nm and is about 60 K at nm. The slope efficiency is between 0.50 and 0.58 W per facet for uncoated devices of 1 mm in cavity length. Maximum observed wall-plug efficiencies are between 30 and 48% for mirror coated lasers. Preliminary lifetests have been carried out for the 650 and 670 nm lasers suggesting that these lasers will be quite reliable in operation.