Auger and SIMS study of segregation and corrosion behaviour of some semiconducting oxide gas-sensor materials
Auger and SIMS study of segregation and corrosion behaviour of some semiconducting oxide gas-sensor materials
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DOI：
10.1016/0925-4005(93)01088-l
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发表时间：
1994-04
影响因子：
8.4
通讯作者：
E. Várhegyi;I. Perczel;J. Gerblinger;M. Fleischer;H. Meixner;J. Giber
中科院分区：
文献类型：
--
作者：
E. Várhegyi;I. Perczel;J. Gerblinger;M. Fleischer;H. Meixner;J. Giber
The influence of corrosive gases (H2, CO, NO, Cl2, SO2) on the composition of sputtered polycrystalline StTiO3, CeO2and Ga2O3thin films was studied. Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) were applied for studying the depth profiles of atomic composition of the thin films, treated for several hundred hours at 800 °C in diluted (20 ppm, 5%) corrosive gases. SrTiO3was strongly attacked by Cl2and SO2. During the Cl2treatment the layer thickness was reduced and the structure altered near the grain boundaries. SO2treatment caused a new surface phase formation (probably SrO). the Ga2O3layer had a fast reaction with Cl2giving rise to volatile Ga products but the other corrosive gases had no deteriorating effect on the layer. CeO2proved to be the most resistant to all the gases mentioned above.
