Analog gain of microchannel plates for 1.5–154 keV/q Arq+(3⩽q⩽16)
Analog gain of microchannel plates for 1.5–154 keV/q Arq+(3⩽q⩽16)
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1.5–154 keV/q Arq+(3⩽q⩽16) 的微通道板模拟增益
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
D. Fry
中科院分区：
文献类型：
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作者：
M. Stockli;D. Fry
对能量在1.5keV/q到154keV/q范围内的Arq+离子(3⩽q⩽16)在模拟模式下低偏压下工作的微通道板的增益进行了测量。结果表明，这种增益很可能是由于被探测离子碰撞时发射的次级电子的数量不同所致，基本上取决于离子的电荷和能量。测量的增益显示为每次充电五种不同离子能量的电荷态的函数，以帮助解释离子源的结果。测量的增益也显示为所有测量的电荷态的离子撞击速度的函数，这表明与离子撞击速度的关系相当复杂。对于四种不同的离子碰撞速度，内插增益也显示为电荷态的函数。对于最低的离子入射速度，增益似乎与离子的势能呈线性增加，其中Ar16+的测量增益大约是测量的增益的两倍。
The gain of microchannel plates operated with low bias voltages in the analog mode has been measured for Arq+ ions (3⩽q⩽16) with energies in the range from 1.5 to 154 keV/q. The results show that the gain, most likely due to the varying number of secondary electrons emitted upon impact of the detected ions, depends substantially on the charge as well as the energy of the ions. The measured gain is shown as a function of the charge state for five different ion energies per charge to assist in the interpretation of the results from the ion sources. The measured gain is also shown as a function of ion impact velocity for all measured charge states, which indicates a rather complex dependence on the ion impact velocity. The interpolated gain is also shown as a function of charge states for four different ion impact velocities. For the lowest ion impact velocity, the gain seems to increase linearly with the ions’s potential energy with the gain measured for Ar16+ being roughly twice as large as the gain measur...