Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications
Characterization of HfTaO films for gate oxide and metal-ferroelectric-insulator-silicon device applications
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DOI：
10.1063/1.2871772
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发表时间：
2008-02-15
影响因子：
3.2
通讯作者：
Ishiwara, Hiroshi
中科院分区：
文献类型：
--
作者：
Lu, Xu-Bing;Maruyama, Kenji;Ishiwara, Hiroshi
从HfTaO薄膜作为金属-铁电体-绝缘体-半导体（MFIS）结构中的绝缘缓冲层和下一代金属-氧化物-硅器件的栅氧化层的应用的角度研究了HfTaO薄膜的特性。用电子束蒸发法在Si衬底上沉积了厚度为2、4和6 nm的HfraO薄膜，并在800 ℃下在O-2气氛中退火1 min。在MFIS二极管的制备中，采用溶胶-凝胶旋涂法在HfTaO上沉积了SrBi_2Ta_2O_9（SBT）薄膜。从不同膜厚的Al/HfTaO/Si二极管的C-V（电容-电压）和I-V（电流-电压）特性中发现，最佳退火温度为800 ℃，HfTaO的介电常数约为17。对于具有Pt/SrBi_2Ta_2O_9（300 nm）/HfTaO（4 nm）/Si栅结构的MFIS器件，观察到在+4 V和-4 V栅电压扫描之间的0.65 V的存储窗口。此外，在磁滞回线的中心偏置的高和低电容值在超过24小时内明显可区分，表现出优异的长期保持性能。(C)2008年美国物理研究所。
Characteristics of HfTaO thin films have been investigated from the viewpoints of their applications as insulating buffer layer in the metal-ferroelectric-insulator-semiconductor (MFIS) structure and gate oxide for next generation metal-oxide-silicon devices. HfraO films with 2, 4, and 6 nm in thickness have been deposited on Si substrates using electron beam evaporation and annealed typically at 800 degrees C for 1 min in O-2 atmosphere. In fabrication of MFIS diodes, SrBi2Ta2O9 (SBT) films have been deposited on HfTaO using a sol-gel spin-coating method. It has been found from C-V (capacitance versus voltage) and I-V (current versus voltage) characteristics of Al/HfTaO/Si diodes with different film thicknesses that the optimum annealing temperature is 800 degrees C and the dielectric constant of HfTaO is about 17. For MFIS devices with Pt/SrBi2Ta2O9 (300 nm)/HfTaO(4 nm)/Si gate structures, a memory window of 0.65 V between +4 and -4 V gate voltage sweeping was observed. Furthermore, the high and low capacitance values biased at the center of the hysteresis loop are clearly distinguishable for over 24 h, demonstrating excellent long-term retentions properties. (C) 2008 American Institute of Physics.