Silicon avalanche photodiodes for direct detection of X-rays
Silicon avalanche photodiodes for direct detection of X-rays
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DOI：
10.1107/s090904950503431x
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发表时间：
2006-03-01
影响因子：
2.5
通讯作者：
Rigal, JM
中科院分区：
文献类型：
--
作者：
Baron, AQR;Kishimoto, S;Rigal, JM
硅雪崩光电二极管（APD）作为同步辐射快速X射线探测器进行了讨论。重点是“直接”检测，其中X射线在硅APD本身内被吸收，因此，使用中等能量的X射线，< 30 keV。APD结构对器件性能的影响进行了研究，并从许多不同的商业设备的代表性数据。讨论的具体领域包括信号形状，高速率行为，时间分辨率和脉冲高度响应。还介绍了几个APD阵列的数据，作为一个集成的封装系统的详细说明。包括比较市售器械（包括阵列）的表格。
Silicon avalanche photodiodes ( APDs) are discussed as fast X-ray detectors for synchrotron radiation. The emphasis is on `direct' detection, where the X-ray is absorbed within the silicon APD itself, and, therefore, on use with medium-energy X-rays, < 30 keV. The impact of APD structure on device performance is examined, and representative data from many different commercial devices are presented. Specific areas discussed include signal shapes, high-rate behavior, time resolution and pulse-height response. Data from several APD arrays are also presented, as is a detailed description of an integrated package system. Tables are included comparing commercially available devices, including arrays.