Development of Gating Foils To Inhibit Ion Feedback Using FPC Production Techniques
Development of Gating Foils To Inhibit Ion Feedback Using FPC Production Techniques
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使用 FPC 生产技术开发抑制离子反馈的门控箔
DOI：
10.1051/epjconf/201817402007
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
T. Matsuda
中科院分区：
文献类型：
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作者：
D. Arai;K. Ikematsu;A. Sugiyama;M. Iwamura;A. Koto;K. Katsuki;K. Fujii;T. Matsuda
气体放大装置对ILC时间投影室漂移区的正离子反馈会降低位置分辨率。为了抑制反馈离子，开发了具有良好电子透射性的基于mpgd的门控箔来代替传统的线栅。在打开或关闭栅极时，浇注箔需要局部控制电场。类气体电子倍增器（GEM）结构的门控箔具有比标准GEM更大的空穴和更小的厚度，用于气体放大。众所周知，铝箔可以传输80%以上的电子，并几乎完全阻挡离子。我们使用柔性印刷电路（FPC）生产技术开发了门控箔，包括改进的单掩模工艺。本文报道了在ILC条件下制作335 μ m节距、12.5 μ m厚、透射率为80%的门控箔的工艺。
Positive ion feedback from a gas amplification device to the drift region of the Time Projection Chamber for the ILC can deteriorate the position resolution. In order to inhibit the feedback ions, MPGD-based gating foils having good electron transmission have been developed to be used instead of the conventional wire gate. The gating foil needs to control the electric field locally in opening or closing the gate. The gating foil with a GEM (gas electron multiplier)-like structure has larger holes and smaller thickness than standard GEMs for gas amplification. It is known that the foil transmits over 80 % of electrons and blocks ions almost completely. We have developed the gating foils using flexible printed circuit (FPC) production techniques including an improved single-mask process. In this paper, we report on the production technique of 335 μ m pitch, 12.5 μ m thick gating foil with 80 % transmittance of electrons in ILC conditions.
ILC 的 GEM 门控研究
DOI：
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发表时间：
2007
期刊：
影响因子：
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作者：
Y. Ohki;Y. Ikagawa;and K. Tatsumi;A. Ishikawa
通讯作者：
A. Ishikawa