Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition
Fabrication of a nanometric Zn dot by nonresonant near-field optical chemical-vapor deposition
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非共振近场光学化学气相沉积法制备纳米锌点
DOI:
10.1063/1.1394955
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发表时间:
2001
影响因子:
4
通讯作者:
M. Ohtsu
中科院分区:
文献类型:
--
作者:
T. Kawazoe;Yoh Yamamoto;M. Ohtsu
We demonstrate a technique for the deposition of nanometric Zn dots by photodissociation of gas-phase diethylzinc using an optical near field under nonresonant conditions. The observed deposited Zn dot was less than 50 nm in size. The photodissociation mechanisms are based on the unique properties of optical near fields, i.e., enhanced two-photon absorption, induced near-field transition, and a direct excitation of the vibration-dissociation mode of diethylzinc.