Formation of polar phase in Fe-doped ZrO2 epitaxial thin films
Formation of polar phase in Fe-doped ZrO2 epitaxial thin films
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DOI：
10.1063/1.5063757
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发表时间：
2018-12
影响因子：
4
通讯作者：
Sujin Choi;T. Shiraishi;T. Kiguchi;Takao Shimizu;H. Funakubo;T. Konno
中科院分区：
文献类型：
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作者：
Sujin Choi;T. Shiraishi;T. Kiguchi;Takao Shimizu;H. Funakubo;T. Konno
证明了外延生长的掺铁氧化锆薄膜中存在一个极性相。通过改变溅射靶材中FeO1.5：ZrO2的比例来控制薄膜的成分，采用离子束溅射和后续热处理的方法在氧化钇稳定的氧化锆片上制备薄膜。用X射线光电子能谱测量了30 nm厚的xFeO1.5-(1−x)ZrO2薄膜(x=0，0.06，0.10，0.14)中各元素的化学状态，并用X射线衍射仪和扫描电子显微镜研究了薄膜的晶体结构。结果表明，未掺杂的薄膜(x=0)以单斜晶系(空间群：P21/c)为主，而含Fe的薄膜呈现由单斜晶系和正交晶系(Pbc21)相组成的多磁区结构，且Pbc21为极性相，表明Fe的加入稳定了正交晶系的结构。同时，当x=0.06时，掺Fe薄膜的极化-电场回线表现出滞后现象。外延生长的掺Fe薄膜中存在一个极性相。通过改变溅射靶材中FeO1.5：ZrO2的比例来控制薄膜的成分，采用离子束溅射和后续热处理的方法在氧化钇稳定的氧化锆片上制备薄膜。用X射线光电子能谱测量了30 nm厚的xFeO1.5-(1−x)ZrO2薄膜(x=0，0.06，0.10，0.14)中各元素的化学状态，并用X射线衍射仪和扫描电子显微镜研究了薄膜的晶体结构。结果表明，未掺杂的薄膜(x=0)以单斜相(空间群：P21/c)为主，而含Fe的薄膜呈现由单斜晶系和正交晶系(Pbc21)相组成的多磁区结构，后者为极性相，表明Fe的加入稳定了正交晶系结构。同时，极化电场也出现了环路现象。
The existence of a polar phase in epitaxially grown Fe-doped ZrO2 thin films has been demonstrated. The films were prepared on yttria-stabilized zirconia substrates by ion-beam sputtering and subsequent annealing, where the composition was controlled by changing the FeO1.5-ZrO2 ratio of the sputtering target. The chemical states of elements in the 30 nm-thick xFeO1.5-(1−x)ZrO2 thin films (x = 0, 0.06, 0.10, and 0.14 nominal composition) have been measured by X-ray photoelectron spectroscopy, and the crystal structure has been examined by using X-ray diffraction and scanning transmission electron microscopy. These observations revealed that the undoped ZrO2 thin film (x = 0) is dominated by the monoclinic phase (space group: P21/c), while the films containing Fe exhibit multi-domain structures consisting of monoclinic and orthorhombic (Pbc21) phases, the latter being a polar phase, showing that the orthorhombic phase is stabilized by the addition of Fe. Concurrently, the polarization-electric field loops of the Fe-doped films exhibited hysteresis for the film with x = 0.06.The existence of a polar phase in epitaxially grown Fe-doped ZrO2 thin films has been demonstrated. The films were prepared on yttria-stabilized zirconia substrates by ion-beam sputtering and subsequent annealing, where the composition was controlled by changing the FeO1.5-ZrO2 ratio of the sputtering target. The chemical states of elements in the 30 nm-thick xFeO1.5-(1−x)ZrO2 thin films (x = 0, 0.06, 0.10, and 0.14 nominal composition) have been measured by X-ray photoelectron spectroscopy, and the crystal structure has been examined by using X-ray diffraction and scanning transmission electron microscopy. These observations revealed that the undoped ZrO2 thin film (x = 0) is dominated by the monoclinic phase (space group: P21/c), while the films containing Fe exhibit multi-domain structures consisting of monoclinic and orthorhombic (Pbc21) phases, the latter being a polar phase, showing that the orthorhombic phase is stabilized by the addition of Fe. Concurrently, the polarization-electric field loops o...