Novel method for characterizing resist performance

Novel method for characterizing resist performance
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表征抗蚀剂性能的新方法

DOI：
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发表时间：
2008
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通讯作者：
P. Willems
P. Willems
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作者：
D. V. Steenwinckel;R. Gronheid;J. Lammers;F. V. Roey;P. Willems

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用单一品质因数判断抗蚀剂性能 对于分辨率、线宽粗糙度LWR和灵敏度， 提出并评估。化学放大光致抗蚀剂用于先进的 光刻节点需要满足严格的要求， 抗蚀剂的数量和工艺特性。沿着决心， 线宽粗糙度和抗蚀剂灵敏度是重要的例子 那里的规格已经变得非常严格。此前一直 显示分辨率、线宽粗糙度和抗蚀剂灵敏度基本上 相互依存因此，当评估或优化抗蚀剂时， 性能，这是非常重要的，把这三个特点， 同时考虑。我们建议将这些特性联合收割机 转化为单个光致抗蚀剂品质因数KLUP。这个品质因数， 其由施胶剂量、成像波长、抗蚀剂厚度 曝光宽容度，酸扩散长度，线宽粗糙度，和 间距，允许直接比较非常不同的抗蚀剂配方 独立于所使用的曝光工具。因此，KLUP具有巨大的潜力， 帮助评估下一个光刻节点的抗蚀剂性能， ArF和EUV波长。
The use of a single figure of merit to judge resist performance with respect to resolution, linewidth roughness LWR, and sensitivity is proposed and evaluated. Chemically amplified photoresists used in advanced lithography nodes need to fulfill stringent requirements for a considerable number of resist and process characteristics. Along with resolution, linewidth roughness and resist sensitivity are important examples where the specifications have become very tight. Previously, it has been shown that resolution, linewidth roughness, and resist sensitivity are fundamentally interdependent. Hence, when evaluating or optimizing resist performance, it is very important to take these three characteristics into consideration simultaneously. We propose to combine these characteristics into a single photoresist figure of merit KLUP. This figure of merit, which is determined from sizing dose, imaging wavelength, resist thickness, exposure latitude, acid diffusion length, linewidth roughness, and pitch, allows for a direct comparison of very different resist formulations independent of the exposure tool used. Thus, KLUP has great potential to assist in evaluating resist performance for the next lithography nodes, for both ArF and for EUV wavelengths.