Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases
Rapid Thermal Annealing for Surface Optimisation of ZnO Substrates for MBE-Grown Oxide Two-Dimensional Electron Gases
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DOI：
10.3390/cryst10090776
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发表时间：
2020-08
期刊：
影响因子：
2.7
通讯作者：
Matthew Sparks;O. Kennedy;P. Warburton
中科院分区：
文献类型：
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作者：
Matthew Sparks;O. Kennedy;P. Warburton
由于低自旋轨道耦合和高电子迁移率的结合，ZnO/ZnMgO界面上的二维电子气体（2DEGs）在自旋电子学和量子计算中有很好的应用前景。生长高迁移率的2deg需要具有低杂质密度的高质量衬底。在这项工作中，我们展示了一种结合高温快速热退火和化学蚀刻的ZnO衬底样品处理方法，以改善2deg后续生长的表面质量。该工艺使2DEG的低温迁移率为4.8×104 cm2V−1s−1。未退火的对照样品的散射率至少是退火样品的三倍。
Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of 4.8×104 cm2V−1s−1. An unannealed control sample shows a scattering rate at least three times greater than the annealed sample.