The radial layout design concept for the Bi-mode insulated gate transistor
The radial layout design concept for the Bi-mode insulated gate transistor
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DOI：
10.1109/ispsd.2011.5890789
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发表时间：
2011-05
期刊：
影响因子：
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通讯作者：
L. Storasta;Munaf T. A. Rahimo;M. Bellini;A. Kopta;U. Vemulapati;N. Kaminski
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文献类型：
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作者：
L. Storasta;Munaf T. A. Rahimo;M. Bellini;A. Kopta;U. Vemulapati;N. Kaminski
本文提出了一种新的径向设计思想，用于优化双模绝缘栅晶体管(BiGT)的阳极短路布局。研究表明，n+-条纹的排列对BiGT的导通特性起着关键作用。借助于三维器件模拟，在0.25×4mm2的大尺寸BiGT模型区域内实现了导通过程中等离子体分布的可视化。模拟了阳极短路的尺寸和布局的影响，并与测量的通态曲线进行了比较。在三维模拟中观察到，当条纹垂直(径向)排列到导频-IGBT边界时，器件中的等离子体分布有了明显的改善。测量结果证实，由于更好地利用了器件区域，因此开态损耗更低。
In this paper we present a new radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT). The study shows that the arrangement of the n+-stripes plays a key role for the on-state characteristics of the BiGT. With the aid of 3D device simulations the visualization of the plasma distribution during the on-state conduction was obtained in a 0.25 × 4 mm2 large BiGT model area. The influence of the dimensioning and layout of the anode shorts was simulated and compared with measured on-state curves. A clear improvement of plasma distribution in the device when the stripes are arranged orthogonally (radially) to the pilot-IGBT boundary is observed in 3D simulations. Measurements confirm lower on-state losses as a result of better utilization of the device area.