Vertically Aligned CNT-Supported Thick Ge Films as High-Performance 3D Anodes for Lithium Ion Batteries
Vertically Aligned CNT-Supported Thick Ge Films as High-Performance 3D Anodes for Lithium Ion Batteries
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DOI:
10.1002/smll.201400003
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发表时间:
2014-07-23
期刊:
影响因子:
13.3
通讯作者:
Zhang, Qing
中科院分区:
文献类型:
--
作者:
Wang, Xinghui;Susantyoko, Rahmat Agung;Zhang, Qing
Due to their high energy density and long cycle life, rechargeable lithium ion batteries (LIBs) are essential to the rapid development of mobile devices and electric vehicles.[1–7] Development of alternative anodes with high reversible capacity, long cycle life, and high rate capability for current commercial graphite materials is in great demand. Germanium (Ge) is of a great potential as an anode material due to its high theoretical specific capacity (ca. 1600 mAh g–1), excellent Li+ diffusivity, and high electrical conductivity.[8–10] However, in practice Ge experiences large volume changes (over 300%) during lithiation and delithiation, which result in pulverization and/or detachment of active materials from the current collector and lead to the loss of electrical contact and poor cycle life.[11, 12] Much effort has been made to overcome these problems through fabrication of various nanostructures and dispersing them into active or inactive host matrices.[10, 13–16] Self-supported Ge thin films grown directly on current collectors, represent an attractive architecture. For instance, Rudawski et al. improved the electrochemical performance of 140–240-nm-thick Ge thin film on Ni foil through ion-beam modification;[11, 17] Wang et al. reported a 50-nm-thick Ge thin film covering copper nanowire arrays that showed improved performance;[18] Yu et al. coated 20-and 50-nm-thick amorphous Ge thin film on 100-nm three-dimensional (3D) bicontinuous Au electrodes, which delivered long cycle life and good rate performance.[19] Although these methods significantly enhance lithium-storage performance, they are hard to apply practically because the limited film thickness results in a small areal capacity. When thicker Ge film (> 300 nm) is used, fast capacity fading is observed. This fading is because there is