Time-dependent electron-beam-induced photoresist shrinkage effects
Time-dependent electron-beam-induced photoresist shrinkage effects
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时间依赖性电子束引起的光刻胶收缩效应
DOI：
10.1117/1.jmm.11.2.023007
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发表时间：
2012
影响因子：
2
通讯作者：
N. Rana
中科院分区：
文献类型：
--
作者：
B. Bunday;A. Cordes;C. Hartig;J. Allgair;A. Vaid;E. Solecky;N. Rana
我们探讨如何光刻胶收缩行为，由于电子束测量的临界尺寸扫描电子显微镜（CD-SEM）取决于各种时间相关的因素。这将包括调查光致抗蚀剂临界尺寸（CD）和CD收缩率如何随光致抗蚀剂老化而变化，以及加载/卸载与静态和动态重复性情况之间收缩趋势的差异，其中测量之间的时间是一个关键变量。这种典型的浸没氟化氩光致抗蚀剂工艺的结果将表明，由于抗蚀剂老化和真空循环而引起的抗蚀剂CD和收缩变化是微不足道的，然而收缩与连续测量之间的时间密切相关，具有良好定义的、高确定性的对数随时间衰减。这些实验确定了在静态测量与动态测量中看到的收缩之间的关键差异，这将被证明对一般的收缩现象和用于执行具有光致抗蚀剂样品的CD-SEM计量的最知名的方法具有深远的影响。
We explore how photoresist shrinkage behavior due to e-beam measurement by critical dimension-scanning electron microscope (CD-SEM) depends on various time-related factors. This will include an investigation of how the photoresist critical dimension (CD) and CD shrinkage varies with photoresist age and the differences in shrinkage trends between load/unload and static and dynamic repeatability cases, where time between measurements is a key variable. The results for this typical immersion argon flouride photoresist process will show that resist CD and shrinkage variation due to resist age and vacuum-cycling is insignificant, yet the shrinkage is strongly linked to time between consecutive measurements, with a well-defined, high-certainty logarithmic decay with time. These experiments identify a key difference between the shrinkage seen in static versus dynamic measurements, which will be shown to have far-reaching implications for the shrinkage phenomenon in general and for the best-known methods for executing CD-SEM metrology with photoresist samples.