Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors
Bias stress stable aqueous solution derived Y-doped ZnO thin film transistors
复制标题
DOI：
10.1039/c1jm11586c
复制
发表时间：
2011-01-01
影响因子：
--
通讯作者：
Moon, Jooho
中科院分区：
文献类型：
--
作者：
Jun, Taehwan;Song, Keunkyu;Moon, Jooho
我们展示了具有高性能以及改进的电/热温度应力稳定性的溶液处理氧化物半导体薄膜晶体管（TFT）。钇掺杂的ZnO（YZO）薄膜晶体管的制造使用通过直接溶解的金属氢氧化物制备的水溶液前体。YZO薄膜中的Y含量对于确定本征电学性质以及正偏置应力、负偏置应力和负偏置温度应力引起的不稳定性是至关重要的。在350 ℃退火的溶液处理的1%Y掺杂ZnO TFT在正偏置应力下表现出明显较低的阈值电压漂移（3.78 V），在负偏置温度应力下表现出-1.72 V），以及良好的器件性能，其迁移率接近1.8 cm（2）V-1 s（-1），开/关电流比接近10（7）。我们的研究结果表明，溶液处理的Y掺杂ZnO TFT具有潜在的高稳定性的透明器件的应用性能。
We demonstrate solution processed oxide semiconductor thin-film transistors (TFTs) with high performance as well as improved electrical/thermal temperature stress stabilities. Yttrium-doped ZnO (YZO) TFTs are fabricated using aqueous precursors prepared via direct dissolution of metal hydroxides. The Y contents in YZO films are critical for determining the intrinsic electrical properties as well as the positive bias stress-, negative bias stress-, and negative bias temperature stress-induced instabilities. Solution processed 1% Y-doped ZnO TFT annealed at 350 degrees C exhibits a noticeably lower threshold voltage shift of 3.78 V under positive bias stress and -1.72 V under negative bias temperature stress as well as the good device performance with a mobility of similar to 1.8 cm(2) V-1 s(-1) and an on/off current ratio of similar to 10(7). Our results suggest that solution processed Y-doped ZnO TFTs have potential for use in high stability performance applications in transparent devices.