Interaction of implanted deuterium and helium with beryllium: Radiation enhanced oxidation
Interaction of implanted deuterium and helium with beryllium: Radiation enhanced oxidation
复制标题
注入的氘和氦与铍的相互作用：辐射增强氧化
DOI：
10.1016/0022-3115(79)90411-2
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发表时间：
1979
影响因子：
3.1
通讯作者：
R. A. Langley
中科院分区：
文献类型：
--
作者：
R. A. Langley
注入氘和氦与铍的相互作用在第一壁涂层和聚变反应堆其他部件的应用中具有重要意义。电抛光后的多晶铍首先用1.98 MeV的Xe背向散射标记注入，然后用5 keV的双原子氘或氦注入。用2.0 MeV的He束分析杂质堆积，即氧。氧化层厚度随注入量的增加呈线性增加。采用2.5 MeV H+束流对D和He进行了离子后向散射深度剖分。此外，将种植体的保留量作为种植体通量的函数进行测量。发现植入物的平均深度与理论范围计算一致。扫描电镜观察水疱形成情况。植入D组未见水疱，植入He组在1.75× 10 17 He·cm−2处出现水疱。随着注入量的增加，水疱直径从10 × 18 He·cm−2时的0.8 μm增加到3 × 10 18 He·cm−2时的5.5 μm。
The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with a Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup, namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H+ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations. Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He, blisters occurred at $ ̃ 1.75× 10 17 He· cm− 2. The blister diameter increased with increasing implant fluence from about 0.8 μm at 10 18 He· cm− 2 to 5.5 μm at 3 x 10 18 He· cm− 2.