Review of Resistance Switching of Ferroelectrics and Oxides in Quest for Unconventional Electronic Mechanisms
Review of Resistance Switching of Ferroelectrics and Oxides in Quest for Unconventional Electronic Mechanisms
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DOI：
10.1080/00150190701261031
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发表时间：
2007-04
期刊：
影响因子：
0.8
通讯作者：
Yukio Watanabe
中科院分区：
文献类型：
--
作者：
Yukio Watanabe
本文综述了近年来在电阻随机存取存储器中引起广泛关注的钙钛矿氧化物的电阻开关效应，重点介绍了准电性和铁电性氧化物。我们研究了开关机制是电场效应还是电流注入效应，以及纳米尺度上的写/读/擦除。基于这些检查，我们寻找非常规电子开关的痕迹，而不是过去被认为对大多数结果负责的热和缺陷机制。
Resistance switching effects in perovskite oxides, which acquire recently intense interests for the application to the resistance-random-access memories, are reviewed with emphasis on paraelectric and ferroelectric oxides. We examine whether the switching mechanism is the electric field effect or the current injection effect as well as the in nanometer scale writing/reading/erasing. Based on these examinations, we search for the traces of unconventional electronic switching, as opposed to thermal and defect mechanisms that are considered responsible for the most results in the past.