MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
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DOI:
10.1016/j.jcrysgro.2012.07.002
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发表时间:
2013-05
影响因子:
1.8
通讯作者:
P. Ludewig;Nikolai Knaub;W. Stolz;K. Volz
中科院分区:
文献类型:
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作者:
P. Ludewig;Nikolai Knaub;W. Stolz;K. Volz