Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P
Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P
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DOI：
10.1063/1.2739302
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发表时间：
2007-06
影响因子：
3.2
通讯作者：
M. Ivill;S. Pearton;Y. Heo;J. Kelly;A. Hebard;D. Norton
中科院分区：
文献类型：
--
作者：
M. Ivill;S. Pearton;Y. Heo;J. Kelly;A. Hebard;D. Norton
研究了Mn掺杂ZnO薄膜和P掺杂ZnO薄膜的磁性和输运性质。超导量子干涉装置的磁测量表明，薄膜是铁磁性的磁化强度和电子密度之间的负相关性控制的P掺杂。特别是，在激活受体掺杂剂导致自由电子密度降低的条件下，磁化强度增强。这一结果与Mn掺杂ZnO中空穴介导的铁磁性相一致，其中束缚受主介导了铁磁性有序化。增加电子密度降低受体浓度，从而淬灭铁磁交换。这一结果对于理解自旋电子器件中过渡金属掺杂半导体的铁磁性具有重要意义。
The magnetic and transport properties of Mn-doped ZnO thin films co-doped with P are examined. Superconducting quantum interference device magnetometry measurements indicate that the films are ferromagnetic with an inverse correlation between magnetization and electron density as controlled by P doping. In particular, under conditions where the acceptor dopants are activated leading to a decrease in free-electron density, magnetization is enhanced. The result is consistent with hole-mediated ferromagnetism in Mn-doped ZnO, in which bound acceptors mediate the ferromagnetic ordering. Increasing the electron density decreases the acceptor concentration, thus quenching the ferromagnetic exchange. This result is important in understanding ferromagnetism in transition metal doped semiconductors for spintronic devices.