Image Converter With III-V Compound Reflective Mode Photocathode
Image Converter With III-V Compound Reflective Mode Photocathode
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DOI：
10.1117/12.953862
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发表时间：
1974-03
期刊：
影响因子：
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通讯作者：
H. Palmer;N. J. Koda;J. Dinan
中科院分区：
文献类型：
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作者：
H. Palmer;N. J. Koda;J. Dinan
据报道，在反射模式下工作的III-V型复合光电阴极具有很高的发光灵敏度和量子效率。已有研究报道砷化镓的灵敏度高达2000 μA/流明（参考文献1）。然而，大多数实用的成像设备需要在半透明模式下操作阴极。当利用在透明衬底上生长的外延层等技术合成半透明III-V型光电阴极时，据报道其灵敏度远低于反射模式阴极。此外，使用反射电子模式时，其宽带响应能力通常在一定程度上受到损害。因此，与透射模式相比，反射模式的灵敏度大幅提高，这足以促使我们评估在成像器件中使用反射III-V型复合反射光电阴极的可能方法。
Very high luminous sensitivities and quantum efficiencies have been reported for III-V compound photocathodes operated in the reflective mode. Sensitivities as high as 2000 μA/lumen for GaAs have been reported (Ref.l) on a research basis. However, most practical imaging devices require operation of the cathode in a semitransparent mode. When semitransparent III-V photocathodes are synthesized by such techniques as epi layers grown on transparent substrates, much lower sensitivities than reflective-mode cathodes are reported. In addition, the broadband response capabilities of the reflectronic mode are generally compromised to some degree when the latter technique is used. Thus, the substantially increased sensitivity of the reflective mode compared to the transmissive mode is sufficient motivation to evaluate possible methods for using reflective III-V compound reflective photocathodes in imaging devices.