Energy resolved spin dependent tunneling in 1.2 nm dielectrics
Energy resolved spin dependent tunneling in 1.2 nm dielectrics
复制标题
1.2 nm 电介质中的能量解析自旋相关隧道
DOI：
10.1063/1.3226633
复制
发表时间：
2009
影响因子：
4
通讯作者：
S. Krishnan
中科院分区：
文献类型：
--
作者：
J. Ryan;P. Lenahan;A. Krishnan;S. Krishnan
我们展示了一种电子顺磁共振技术，该技术仅以非常直接的方式将点缺陷结构和能量水平联系起来。国家电子。集成电路，观察值对微电子技术非常重要。
We demonstrate an electron paramagnetic resonance technique which simply links point defect structure and energy levels in a very direct way. The technique’s simplicity and the robust character of the response make it, at least potentially, of widespread utility in the understanding of defects important in solid state electronics. Since the specific defect observed is generated in silicon oxynitride by high electric field stressing, an important device instability problem in present day integrated circuitry, the observations are of considerable importance for microelectronics technology.