Enhanced Nonlinear Refractive Index of C-Rich SiC Waveguides Via Annealing for PRZ-OOK Data Transmission
Enhanced Nonlinear Refractive Index of C-Rich SiC Waveguides Via Annealing for PRZ-OOK Data Transmission
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DOI：
10.1109/jstqe.2018.2846021
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发表时间：
2018-11-01
影响因子：
4.9
通讯作者：
Lin, Gong-Ru
中科院分区：
文献类型：
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作者：
Hsieh, Cheng-Hsuan;Cheng, Chih-Hsien;Lin, Gong-Ru
利用具有增强光学非线性的富碳SiCx制作了环形光波导，在波长转换方案下实现了脉冲数据流的皮秒光开关。60min处理后的富碳SiCx薄膜具有丰富的类石墨(sp(2)类)C-C键，导致其克尔系数增大。在横向电模偏振泵浦-探测分析下，富C SiCx基环光波导的连续波透射率梳状谱显示出比横向磁模分析更高的Q因子。随着富碳SiCx的非线性折射率从1.37×10~(-12)增加到2.38×10~(-12)cm~(2)/W，在4.3W的峰值泵浦功率下，透射梳的红移从0.12 nm增加到0.14 nm。在富C SiCx环形光波导中实现了脉冲比特数据的皮秒光开关，其最佳消光比(ER)、信噪比(SNR)和误码率(BER)分别为8.1dB、8.2dB和1.7×10(-11)。在将探测波长与红移透射率梳匹配后，波长转换后的数据呈现倒置格式，优化后的ER、SNR和BER分别为7.9d B、8.1d B和7.8×10(-10)。在光子集成电路的超高速数据处理中，退火再生长的富C-SiCx比目前报道的具有更好的非线性光学开关性能。
The C-rich SiCx with enhanced optical nonlinearity is employed to fabricate ring waveguides to perform picosecond optical switching of pulsed data streams under the wavelength conversion scheme. The C-rich SiCx film after 60-minute annealing exhibits abundant graphite-like (sp(2)-like) C-C bonds resulting in the increase of its Kerr coefficient. Under transverse electric mode polarized pump-probe analysis, the continuous-wave transmittance comb spectrum of the C-rich SiCx-based ring waveguide shows a higher Q-factor than for transverse magnetic mode analysis. The red-shift of the transmission comb under a peak pumping power of 4.3 W increases from 0.12 to 0.14 nm as the nonlinear refractive index of the C-rich SiCx increases from 1.37 x 10(-12) to 2.38 x 10(-12) cm(2)/W through increasing the annealing time from 0 to 60 min. The picosecond optical switching of pulsed bit data in the C-rich SiCx ring waveguide provides an optimized extinction ratio (ER), a signal-to-noise ratio (SNR), and a bit-error rate (BER) of 8.1 dB, 8.2 dB, and 1.7 x 10(-11), respectively. After matching the probe wavelength with the red-shifted transmittance comb, the wavelength-converted data shows an inverted format with optimized ER, SNR, and BER of 7.9 dB, 8.1 dB, and 7.8 x 10(-10), respectively. The annealing regrown C-rich SiCx can perform better nonlinear optical switching than reported so far for ultrafast data processing in photonic integrated circuits.