High Quality InSb Films Grown on Si(111) Substrate via InSb Bi-Layer
High Quality InSb Films Grown on Si(111) Substrate via InSb Bi-Layer
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DOI：
10.1380/ejssnt.2009.145
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发表时间：
2009-03
影响因子：
0.7
通讯作者：
M. Mori;K. Nagashima;K. Ueda;T. Yoshida;C. Tatsuyama;K. Maezawa;M. Saito
中科院分区：
文献类型：
--
作者：
M. Mori;K. Nagashima;K. Ueda;T. Yoshida;C. Tatsuyama;K. Maezawa;M. Saito
研究了利用InSb双层（Si(111)-2 × 2-InSb表面重构）制备InSb薄膜的异质外延生长。通过在Si(111)-√7 ×√3- in表面重建1层Sb吸附制备了InSb双层膜，并得到了2 × 2- in或√3 ×√3- in的结果。通过√7 ×√3-In表面重建生长的InSb薄膜相对于Si衬底完全旋转30°。由于采用高In覆盖率的√7 ×√3-In表面重构，InSb双层的覆盖面积增大，而由InSb双层的In原子解吸引起的2 × 1-Sb表面相覆盖面积减小。由于不旋转的InSb晶体质量和电性能较差，薄膜的电性能比通过2 × 2- in生长的样品有所提高。横截面扫描透射电子显微镜图像清楚地表明，通过√7 ×√3-In表面重建生长的InSb薄膜的位错密度低于直接在Si（111）衬底上生长的样品。(DOI: 10.1380 / ejssnt.2009.145)
The heteroepitaxial growth of InSb films via InSb bi-layer (Si(111)-2 × 2-InSb surface reconstruction) was studied. The InSb bi-layer was able to be prepared by 1 monolayer Sb adsorption onto Si(111)-√7 × √3-In surface reconstruction, as well as the results with 2 × 2-In or√3 × √3-In. The InSb film grown via the √7 × √3-In surface reconstruction was fully rotated by 30° with respect to Si substrate. Because by using the √7 × √3-In surface reconstruction with higher In coverage, the area covered by the InSb bi-layer increased, and the area covered by 2 × 1-Sb surface phase which caused by desorption of In atoms from the InSb bi-layer decreased. Due to the decrease of the InSb crystals without rotation, which have poor crystal quality and electric properties, the electric properties of the films improved than those of the samples grown via 2 × 2-In. The cross-sectional scanning transmission electron microscope image clearly showed that the InSb film grown via the √7 × √3-In surface reconstruction has lower dislocation density than the sample directly grown on Si(111) substrate. [DOI: 10.1380/ejssnt.2009.145]