Lifetime of flatband states
Lifetime of flatband states
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DOI：
10.1103/physrevb.98.134203
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发表时间：
2018-03
影响因子：
3.7
通讯作者：
C. Gneiting;Zhoubin Li;F. Nori
中科院分区：
文献类型：
--
作者：
C. Gneiting;Zhoubin Li;F. Nori
Flatband的特点是无失真存储可裁剪形状的紧凑局域状态。然而，它们可靠的存储逗留受到无序势的限制，无序势通常会导致无控耦合进入色散带。我们发现，虽然从能带交叉处失谐抑制了平带态向色散带的直接衰变，但无序引起的态失真导致了延迟的退相介导的衰变，解除了平带态的静态性质，并为可靠的存储旅居设定了有限的寿命。我们举例说明了这种一般的，无序诱导的衰变机制在十字绣晶格。我们的分析依赖于对具有量子主方程的无序平均量子系统的时间分辨处理，它独立于平台。
Flatbands feature the distortion-free storage of compact localized states of tailorable shape. Their reliable storage sojourn is, however, limited by disorder potentials, which generically cause uncontrolled coupling into dispersive bands. We find that, while detuning flatband states from band intersections suppresses their direct decay into dispersive bands, disorder-induced state distortion causes a delayed, dephasing-mediated decay, lifting the static nature of flatband states and setting a finite lifetime for the reliable storage sojourn. We exemplify this generic, disorder-induced decay mechanism at the cross-stitch lattice. Our analysis, which applies platform-independently, relies on the time-resolved treatment of disorder-averaged quantum systems with quantum master equations.